| PART |
Description |
Maker |
| KM23V32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K3N6C1000E-GCTCYC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| K3N6VU1000E-GC/TC/YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| AS6C3216 AS6C3216-55TIN |
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
|
Alliance Semiconductor Corporation
|
| KM23V32005BG |
32M-Bit (4Mx8/2Mx16) COMS MASK ROM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K3N6C4000E-DC |
32M-Bit (2Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| A82DL3234 A82DL3244 A82DL3224UG-70 A82DL3224TG-70 |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAMA82DL32x4T（ü）32兆位Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL32x4T（ü）32兆位Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL32x4T（ü）32兆位4Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
| DA28F320 |
IC,EEPROM,NOR FLASH,2MX16/4MX8,CMOS,SOP,56PIN,PLASTIC
|
intel
|
| TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位）的CMOS闪存EEPROM的（32M的8位与非的EEPROM
|
Toshiba Corporation
Toshiba, Corp.
|
| CMS3216LAF CMS3216LAG CMS3216LAH |
32M(2Mx16) Low Power SDRAM
|
FIDELIX
|
| AM29DL323GB70WMI AM29DL322GT70WMI AM29DL322GT90EI |
32 megabit CMOS 3.0 volt-only, simultaneous operation flash memory 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
IC Flash Mem PARL 2.7v To 3.6v 32-MBit 2M x 16/4mx8 70ns 48FBGA 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
IC,MEM,FLASH,2MX16,3V,90NS,SIMUL 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
